They are collaborating with Samsung Electronics to use its 10nm FinFET process. The processor will be made of nanomaterials—molecules and atoms less than 100 nanometers (nm) in size that exhibit different properties than their larger-particle counterparts: some enhanced nanomaterial characteristics include lighter weight, higher strength, and greater chemical reactivity.
As per the official press release, compared to its 14 nm Snapdragon 820 predecessor, the 835 can be 30% smaller, have 27% higher performance, and be 40% more energy-efficient. This means a bit more breathing room inside smartphones for other components (please don't remove any more 3.5 mm jacks!) and better battery life... as far as the SoC is involved, at least.
The new processor also supports Qualcomm's next generation of fast-charging — Quick Charge 4.0. It is said to provide 20% faster charging than the already impressive Quick Charge 3.0. As a quick example – the HTC 10, LG G5, and Galaxy S7 all charge up to 100% for 80-100 minutes, but need only a few minutes on a charger in order to get hours worth of juice. Quick Charge 4.0 will also be fully compliant with USB Type-C, so phones equipped with the reversible data port will no longer need to suffer slower charging times.
In addition to the unveiling of the Snapdragon 835’s manufacturing process, it was also previously announced that the Snapdragon 835 will be carrying Qualcomm’s new X16 LTE Modem, which is capable of Gigabit download speeds.
The Qualcomm Snapdragon 835 is already in production, and should begin shipping in flagship phones during the first half of 2017, just in time for the much anticipated flagship refreshes (and just as rumors are starting to appear for the Samsung Galaxy S8, LG G6, HTC 11, and various other devices).
Source : Qualcomm (1, 2)